The fans of Samsung might not have to wait until the customary spring event of Samsung to have a look at the next flagship Galaxy phones. A source informed Evan Blass, a well-connected leak writer, that Samsung would preview both the Galaxy S9 and the Galaxy S9 Plus in January at CES. Samsung would still have a formal launch event in March. However, the sneak peek will allow users to get a hint of what to expect in advance. It is not certain why the company would do this. However, one reason might be to get ahead of leaks and to manage expectations. It probably does not want iPhone X-style leaks where the customers will already know most of the details before the company has stated a single word.
With that stated, there might not be as much reason to get excited about next year. If the S8 was a “tick” where the company reinvented its design, the S9 is said to be a “tock” that refines the formula.
Both the S9 variants would retain the familiar 5.8- and 6.2-inch curved displays, the 64GB of expandable storage and, a 3.5mm headphone jack. Instead, there would be refinements. Both would have AKG-badged stereo speakers, a 10-nanometer processor (which is possibly the rumoured Snapdragon 845) and a fingerprint reader which is rear-mounted and that is actually in a convenient position. Thus, there would be no more smudging the camera when users try to sign in. And unlike 2017, where the S8 variants were virtually interchangeable beyond their size, there would be extra reasons to purchase the S9 Plus as buyers would get more RAM (6GB versus 4GB) and a second rear camera. There would not be much reason to buy the Galaxy Note 8 beyond its pen, as valuable as that pen can be.
Also, the company would still be committed to its phone-as-PC DeX dock. The dock for the 2018 design would abandon the vertical cradle in favour of laying your phone flat in order to use the touchscreen as a trackpad or a virtual keyboard. If so, that could lower the cost of hopping on the DeX bandwagon by lessening the need for a mouse, keyboard, or both.